| PART |
Description |
Maker |
| IRF240-243 IRF241 IRF242 IRF243 IRF641 IRF642 IRF6 |
N-Channel Power MOSFETs, 18A, 150-200V N沟道功率MOSFET8A条，15000
N-Channel Power MOSFETs/ 18A/ 150-200V
N-Channel Power MOSFETs 18A 150-200V
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HUFA75829D3S HUFA75829D3 HUFA75829D3ST |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs
18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT6035SVR APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| STSJ80N4LLF3 |
N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET?III Power MOSFET for DC-DC conversion
N-channel 40V - 0.0042ヘ - 18A - PowerSO-8⑩ STripFET⑩III Power MOSFET for DC-DC conversion
|
STMicroelectronics
|
| IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRF330 MTM5N35 MTM5N40 IRF733 IRF730 MTPSN40 IRF73 |
IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs
N-Channel Power MOSFETs, 5.5 A, 350 V/400 V
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| IRF101 IRF140-143 IRF142 IRF143 IRF541 IRF543 IRF5 |
N-Channel Power MOSFETs/ 27 A/ 60-100V
N-Channel Power MOSFETs, 27 A, 60-100V 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Samsung semiconductor
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
